'i. c/ o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 bux66, bux66a, BUX66B, bux66c high voltage silicon p-n-p transistors for high-speed switching and linear-amplifier applications features; ? high voltage ratings: vceotsus) = -150v max. (buxb6) =-150v max. (bux66a) = -300 v max. (BUX66B) ? -350 vmax, (bux66c) ? large sale-operating area. terminal designations ttcs-i'ite jedec to-213aa the rca-bux66, bux66a, BUX66B, and bux66c are sil- icon p-n-p transistors with high breakdown voltages and fast switching speeds. these transistors are intended lor a wide variety of applications in ac/dc commercial equipment. typical applications include high-voltage operational and linear amplifiers, high-voltage switches, switching regula- tors, converters, and inverters. maximum ratings, absolute-maximum values: = -1.5v vceb(sus) r8e= 1 v?0(sus) vebo upto25c above 85?c, derate linearly t,t,,, tl at distance 1/16 in. (1.58 mm) from seating plane for 10 s max bux66 -200 -200 -175 -150 -6 -2 ?5 35 0.2 235 bux66a ?300 ?300 ?275 ?250 -6 o ?5 ?1 BUX66B -350 -350 -325 -300 -6 ?2 . ?5 ?1 35 35 0.2 0.2 -65 to 200 235 235 bux66c ?400 -400 -375 -350 ?6 -2 -5 -1 35 0,2 235 v v v a a a w w/"c c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
bux66, bux66a, BUX66B, bux66c electrical characteristics, at case temperature ttc) = 25c unless otherwise specified characteristic symbol 'ceo 'cex tc - 100c iebo hfe vceo(sus) vcer(sus) rbe - so n vbe(sat) vce(sat) cobo vcb ? 10 v ( = 1 mhz is/b t = 1 s, nonrep. net f = 5 mhz tr vcc = -200 v 's vcc ' -200 v tf vcc " -200 v r0jc test conditions voltage vdc vce -150 -200 -300 -200 -300 -5 -40 -10 vbe 1.5 1.6 1.6 1.5 6 current adc 1c 0 -1? -0.2a -0.2 -1' -1" -0.2 -1 ? 1 -1 ib 0 0 -0,15 -0.15 -0.1 ob -0.1 ob -0,1 ob limits bux66 min. - : : - 10 -150= -175c - - -875 4 _ ^ - - max. -10 -8 -10 -1 150 - -, -1.6 -2.6 220 _ 0.6 2.5 0.6 5 bux66a min. - ? : - 10 -250c -2750 - - -875 4 _ _ - - max. -10 -8 -10 -1 150 - _ -1.5 -2.5 220 _ _ 0.6 2.5 0.6 5 units ma ma v v v pf ma ?js oc/w 8 pulsed: pulse duration = 300 ys; duty factor < 2%. b ibi = ib2 c sustaining voltages, vceo(sus) and vcerlsusi must not be measured on a curve tracer, . c?jc teupeflaturc ( collectm clmncktllc fo.1 ? typical gain-bandwidth product for ill typut. flg.2 ? typical tftnrftf characteristics for all types.
bux66, bux66a, BUX66B, bux66c electrical characteristics, at case temperature itci = 25c unless otherwise specified characteristic symbol 'ceo (cex tc - 100c iebo hfe vceo(sus) vcer(sus) rbe = 50fl vbeuat) vce(sat) c0bo vcb= 10v ( = 1 mhz is/b t = 1 s, nonrep. kl f = 5 mhz tr vcg ? -200 v tj vcg ? -200 v tf vcc - -200 v rfljc test conditions voltage vdc vce -150 -350 -400 -350 -400 -5 -40 -10 vbe 1.5 1.5 1.5 1.5 6 current adc "c 0 -i" -0.2? -0.2 -1? -1? -0.2 -1 -1 -1 ib 0 0 -0.15 -0.15 -0.1 0>> -0.1 ob -0.10>> limits BUX66B min. - : - - 10 -300"= -325c - - -b75 4 _ _ - - max. -5 -8 -10 -1 150 - _ -1.5 -2.5 220 ^ _ 0.6 2.5 0.6 5 bux66c min. - : - - 10 -350e -37 5c - - -875 4 _ _ _ - max. -5 -8 -10 -1 150 - ? -1.5 -2.5 220 . 0.6 2.5 0.6 5 units ma ma v v v pf ma us c/w 3 pulsed; pulse duration = 300ps; duty factor < 2%, b |b1 n |b2 c sustaining voltages, vceq($us) and vqer(sus) must not be measured on a curve tracer. collector cu1hen1 (1c)?* fig.3 ? typfcat saturation-voltage ch for fftl typst. 4 ~ derating curve for all types.
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